Special Issue on the 20th Anniversary of Wuhan National Laboratory for Optoelectronics (WNLO)|10 Article(s)
Photonic integrated optical phased arrays and their applications [Invited]
Zhipeng Ma, Yuanjian Wan, Hang Liang, Yao Fu, Guobiao Tang, Xiaoyang Zhao, Shiao Zhao, Haibo Kuang, Yu Zhang, and Jian Wang
Chinese Optics Letters
  • Publication Date: Mar. 01, 2024
  • Vol. 22, Issue 2, 020041 (2024)
On-chip stimulated Brillouin scattering [Invited]
Linfeng Yu, Chukun Huang, Ming Cheng, Kang Wang, Haotian Shi, Qiang Huang, and Junqiang Sun
Chinese Optics Letters
  • Publication Date: Feb. 29, 2024
  • Vol. 22, Issue 2, 020031 (2024)
Current status and development of CMOS SiPM for scintillator-based radiation detectors toward all-digital sensors [Invited]
Nicola D’Ascenzo, Wentao Hu, Hui Lao, Yuexuan Hua, Bo Zhang, Lei Fang, Daoming Xi, Rui Zheng, Ao Qiu, Emanuele Antonecchia, Yiqing Ling, Yuqing Liu, Yan Li, Hang Yu, Peng Xiao, and Qingguo Xie
Modern scintillator-based radiation detectors require silicon photomultipliers (SiPMs) with photon detection efficiency higher than 40% at 420 nm, possibly extended to the vacuum ultraviolet (VUV) region, single-photon time resolution (SPTR) < 100 ps, and dark count rate (DCR) < 150 kcps/mm2. To enable single-photon time stamping, digital electronics and sensitive microcells need to be integrated in the same CMOS substrate, with a readout frame rate higher than 5 MHz for arrays extending over a total area up to 4 mm × 4 mm. This is challenging due to the increasing doping concentrations at low CMOS scales, deep-level carrier generation in shallow trench isolation fabrication, and power consumption, among others. The advances at 350 and 110 nm CMOS nodes are benchmarked against available SiPMs obtained in CMOS and commercial customized technologies. The concept of digital multithreshold SiPMs with a single microcell readout is finally reported, proposing a possible direction toward fully digital scintillator-based radiation detectors.
Chinese Optics Letters
  • Publication Date: Mar. 01, 2024
  • Vol. 22, Issue 2, 020021 (2024)
Optical vortex array: generation and applications [Invited]
Jing Du, Zhiqiang Quan, Kang Li, and Jian Wang
Chinese Optics Letters
  • Publication Date: Mar. 01, 2024
  • Vol. 22, Issue 2, 020011 (2024)
Editorial of special issue on the 20th anniversary of Wuhan National Laboratory for Optoelectronics (WNLO)
[in Chinese]
Chinese Optics Letters
  • Publication Date: Feb. 29, 2024
  • Vol. 22, Issue 2, 020001 (2024)
Tissue optical clearing imaging for structural changes of neuromuscular junctions after mice ischemic stroke [Invited]
Jianyi Xu, Yi Dai, Ang Xuan, Yingtao Yao, Shaojun Liu, Tingting Yu, and Dan Zhu
Ischemic stroke causes long-term disability and results in motor impairments. Such impairments are associated with structural changes in the neuromuscular junction (NMJ), including detailed morphology and three-dimensional (3D) distribution. However, previous studies only explored morphological changes of individual NMJs after stroke, which limits the understanding of their role in post-stroke motor impairment. Here, we examine 3D distributions and detailed morphology of NMJs in entire mouse muscles after unilateral and bilateral strokes induced by photothrombosis. The results show that 3D distributions and numbers of NMJs do not change after stroke, and severe unilateral stroke causes similar levels of NMJ fragmentation and area enlargement to bilateral stroke. This research provides structural data, deepening the understanding of neuromuscular pathophysiology after stroke.
Chinese Optics Letters
  • Publication Date: Dec. 15, 2023
  • Vol. 21, Issue 12, 120061 (2023)
Decoding the future: opportunities and challenges in next-generation optical data storage [Invited]|On the Cover
Zhi Yan, Jingqi Hu, Zhexiang Xiao, Dale Xie, Qiang Cao, Zongsong Gan, and Jingyu Zhang
The ongoing quest for higher data storage density has led to a plethora of innovations in the field of optical data storage. This review paper provides a comprehensive overview of recent advancements in next-generation optical data storage, offering insights into various technological roadmaps. We pay particular attention to multidimensional and superresolution approaches, each of which uniquely addresses the challenge of dense storage. The multidimensional approach exploits multiple parameters of light, allowing for the storage of multiple bits of information within a single voxel while still adhering to diffraction limitation. Alternatively, superresolution approaches leverage the photoexcitation and photoinhibition properties of materials to create diffraction-unlimited data voxels. We conclude by summarizing the immense opportunities these approaches present, while also outlining the formidable challenges they face in the transition to industrial applications.
Chinese Optics Letters
  • Publication Date: Dec. 13, 2023
  • Vol. 21, Issue 12, 120051 (2023)
QAM signal with electric field sensor based on thin-film lithium niobate [Invited]|Editors' Pick
Tingan Li, Zhao Liu, An Pan, Chenglin Shang, Yong Liu, Cheng Zeng, and Jinsong Xia
Large-bandwidth, high-sensitivity, and large dynamic range electric field sensors are gradually replacing their traditional counterparts. The lithium-niobate-on-insulator (LNOI) material has emerged as an ideal platform for developing such devices, owing to its low optical loss, high electro-optical modulation efficiency, and significant bandwidth potential. In this paper, we propose and demonstrate an electric field sensor based on LNOI. The sensor consists of an asymmetric Mach–Zehnder interferometer (MZI) and a tapered dipole antenna array. The measured fiber-to-fiber loss is less than -6.7 dB, while the MZI structure exhibits an extinction ratio of greater than 20 dB. Moreover, 64-QAM signals at 2 GHz were measured, showing an error vector magnitude (EVM) of less than 8%.
Chinese Optics Letters
  • Publication Date: Dec. 13, 2023
  • Vol. 21, Issue 12, 120041 (2023)
Theoretical efficiency limit and realistic losses of indoor organic and perovskite photovoltaics [Invited]
Xinlu Liu, Ruiyu Tian, Zedong Xiong, Yang Liu, and Yinhua Zhou
Indoor organic and perovskite photovoltaics (PVs) have been attracting great interest in recent years. The theoretical limit of indoor PVs has been calculated based on the detailed balance method developed by Shockley–Queisser. However, realistic losses of the organic and perovskite PVs under indoor illumination are to be understood for further efficiency improvement. In this work, the efficiency limit of indoor PVs is calculated to 55.33% under indoor illumination (2700 K, 1000 lux) when the bandgap (Eg) of the semiconductor is 1.77 eV. The efficiency limit was obtained on the basis of assuming 100% photovoltaic external quantum efficiency (EQEPV) when E ≥ Eg, there was no nonradiative recombination, and there were no resistance losses. In reality, the maximum EQEPV reported in the literature is 0.80–0.90. The proportion of radiative recombination in realistic devices is only 10-5–10-2, which causes the open-circuit voltage loss (ΔVloss) of 0.12–0.3 V. The fill factor (FF) of the indoor PVs is sensitive to the shunt resistance (Rsh). The realistic losses of EQEPV, nonradiative recombination, and resistance cause the large efficiency gap between the realistic values (excellent perovskite indoor PV, 32.4%; superior organic indoor PV, 30.2%) and the theoretical limit of 55.33%. In reality, it is feasible to reach the efficiency of 47.4% at 1.77 eV for organic and perovskite photovoltaics under indoor light (1000 lux, 2700 K) with VOC = 1.299 V, JSC = 125.33 µA/cm2, and FF = 0.903 when EQEPV = 0.9, EQEEL = 10-1, Rs = 0.5 Ω cm2, and Rsh = 104 kΩ cm2.
Chinese Optics Letters
  • Publication Date: Dec. 13, 2023
  • Vol. 21, Issue 12, 120031 (2023)
Measurement of molecular alignment with deep learning-based M-XFROG technique [Invited]
Wanchen Tao, Siqi Sun, Lixin He, Yanqing He, Jianchang Hu, Yu Deng, Chengqing Xu, Pengfei Lan, and Peixiang Lu
Chinese Optics Letters
  • Publication Date: Oct. 03, 2023
  • Vol. 21, Issue 12, 120021 (2023)
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